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IOO (Laser Bench)
masayuki.nakano - 1:04 Tuesday 06 June 2017 (2853) Print this report
Measurements around the FSS
This is the memo about the FSS loop fundamental numbers with current settings .

1. the settings

laser curent : 1.997A

temperature : 23.40 degree The laser crystal temperature should not be around 25degree. There might be mode hop of the laser and makes transmitted power of the reference cavity unstable.

LDA temperature : 25.50 degree

LDB temperature : 24.16 degree

slow cource 658

slow fine 126

common gain : 100

fast:270 

offset 437

2. the PD outputs at RefCav REFL and TRANS

TRANS DC PD(thorlabs PDA100, gain@10dB) :  724mV
REFL DC PD(thorlabs PDA100, gain@10dB) : 3V(locked), 3.96V(un-locked)

3. The power of TRANS and REFL

TRANS power with the FSS locked : 630uW
REFL power without the FSS locked : 4.6mW -> the PDA100 calibration factor is 3.96V/4.6mW = 1.16 V/mW

3. NPRO laser PZT efficiency measurement

The PZT efficiency, 1.6MHz/V, used for some calculation was not the number for a current NPRO but a old one used in iKAGRA.
The NPRO frequency was swept with exciting a PZT by 10Hz - 50Vpp triangular signal. And a error signal was measured and the 51.75 MHz sideband was used for a frequency ruler. 51.75MHz corresponds to 35 V excitation. With this measurement the PZT efficiency was estimated as

51.75MHz/35V = 1.48MHz/V

4.modulation depth measurement

the NPRO PZT was swept with same signal with the PZT efficiency measurement and measure the transmitted power. Then the resonant peak of a carrier and a sideband was compared and the modulation index was estimated. The height of each peak was 634mV and 29mV. The modulation signal injected to EOM was (18.9(function generator output) - 3(reduction by power splitter)) = 15.9dBm, so the injected voltage is sqrt(10^(15.9dBm/10)*50ohm*1e-3) = 1.39Vrms. The estimated modulation index is

(29mV/634mV)*2/(1.39Vrms*sqrt(2)) = 4.7e-2rad/V

According to the datasheet of newport 4003NF, modulation depth should be 0.1-0.3rad/V. So the result seems to be smaller than typical modulation depth
Images attached to this report
Comments to this report:
shigeo.nagano - 8:27 Wednesday 07 June 2017 (2866) Print this report

The power ratio of laser carrier and sideband is related to the laser modulation index m:

(BesselJ1(m) / BesselJ0(m))2 = sideband power / carrier power.

m was calculated to be 0.418 [rad]. At this time, the RF power of 15.9 dBm was applied to the EOM. (It corresponds to the voltage amplitude of 1.97 [V].)

Thus, the modulation efficeincy of the EOM becomes 0.418 [rad] / 1.97 [V] = 0.21 [rad/V].

The laser shot noise level was estimated to be 5.2 x 10^(-3) [Hz/sqrtHz], when incident power into photodiode was 4.6 [mW] and the visibility in reflection port of the cavity, which was defined as (Pmax - Pmin) / Pmax, was 0.24.

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